 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOP608 Complementary Enhancement Mode Field Effect Transistor General Description The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a Green Product ordering option. AOP608 and AOP608L are electrically identical. Features n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33m (VGS=10V) < 46m (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45m (VGS = -10V) < 63m (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Max p-channel -40 20 -5.5 -4.4 -20 2.5 1.6 -55 to 150 W C A Units V V Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 20 6.3 5 20 2.5 1.6 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 37 74 28 35 73 32 Max Units 50 C/W 90 C/W 40 C/W 50 90 40 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP608 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=6.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=6.3A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 20 24.1 40 33.7 22 0.77 1 6.3 404 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 95 37 2.7 9.2 VGS=10V, VDS=20V, ID=6.3A 4.6 1.6 2.5 4.3 VGS=10V, VDS=20V, RL=3, RGEN=3 IF=6.3A, dI/dt=100A/s 2 Min 40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 2.3 3 33 46 A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 3.4 15 2.8 21.2 15.8 Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 25 20 ID (A) 4V 15 10 VGS=3.5V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 5 25C ID(A) 10 125C 5V 4.5V 15 20 VDS=5V 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 VGS=10V ID=6.3A VGS=4.5V ID=5A 50 RDS(ON) (m) 40 VGS=4.5V 30 VGS=10V 20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 RDS(ON) (m) 125C IS (A) 50 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=6.3A 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID= 6.3A Capacitance (pF) 800 600 Ciss 400 Coss 200 Crss 0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10.0 ID (Amps) 10ms 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 40 10s Power (W) 100s 1ms TJ(Max)=150C TA=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP608 P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-5.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.6A Forward Transconductance VDS=-5V, ID=-5.5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -20 34.7 56 50.6 12 -0.75 -1 -5.5 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 14.2 VGS=-10V, VDS=-20V, ID=-5.5A 7.1 2.2 4.1 7.7 VGS=-10V, VDS=-20V, RL=3.6, RGEN=3 IF=-5.5A, dI/dt=100A/s 2 Min -40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 100 -1.9 -3 45 70 63 A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 8 26.5 11.5 21.9 14.9 Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The 2 A: The value of R JA is measured with the device mounted on board design. The current Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific 1in FR-4 board with 2oz. rating is based on the t 10s thermal resistance value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. rating. B: Repetitive rating, pulse width limited by junction temperature. B: Repetitiveis the sum of the thermal impedence from junction to lead RJL and lead to ambient. C. The R JA rating, pulse width limited by junction temperature. C. The R JA characteristics in Figures 1 to 6,12,14 are obtained lead 80 s pulses, to ambient. D. The staticis the sum of the thermal impedence from junction tousing RJL and lead duty cycle 0.5% max. D. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz.duty cycle 0.5% max. E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, Copper, in a still air environment with TA=25C. The 2 E. These tests are performed with rating. SOA curve provides a single pulsethe device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve 2005 Rev 1: Aug provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 20 -ID (A) 15 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics VGS=-3V -3.5V -ID(A) 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance VGS=-4.5V 1.6 1.4 1.2 1 0.8 30 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (m) -IS (A) 100 80 60 40 20 2 3 4 5 6 7 8 9 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C ID=-5.5A 1.0E+01 1.0E+00 1.0E-01 125C 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-4.6A VGS=-10V ID=-5.5A -10V -5V -6V -4.5V -4V 25 VDS=-5V 20 125C 25C 60 55 50 45 40 35 VGS=-10V Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-30V ID=-5.5A Capacitance (pF) 1000 800 600 Ciss 400 200 0 0 Coss Crss 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10.0 ID (Amps) 10ms 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 10s Power (W) 100s 1ms 40 TJ(Max)=150C TA=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZJA Normalized Transient Thermal Resistance PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AOP608L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |